Samsung Electronics has introduced its latest AI-focused memory technology at the Future of Memory and Storage (FMS) 2026 conference in California, strengthening its position in the rapidly growing artificial intelligence semiconductor market.
The company showcased a new memory architecture designed to deliver higher storage capacity, faster performance and better energy efficiency for next-generation AI applications.
The highlight of the announcement was Samsung’s V10 Bonding V-NAND (BV-NAND) prototype. The new chip features more than 400 memory layers and uses a wafer-bonding architecture that increases storage density by 58% compared with the previous generation. The technology is designed to support AI workloads that require faster data processing and larger storage capacity.
Samsung also revealed concept designs for zHBM and zNAND-O, next-generation memory technologies aimed at AI servers and data centres. According to the company, the new wafer-bonding approach could provide more than 10 times the memory density of conventional HBM5 technology while improving energy efficiency and reducing heat generation.
The launch comes at a time when demand for AI memory chips continues to surge. As AI applications evolve from training large language models to delivering real-time responses, technology companies are investing heavily in advanced memory solutions capable of handling larger datasets and faster computing requirements.
Samsung has also said that 60% to 70% of its future memory sales are expected to come through long-term agreements with major data centre customers.
As global spending on AI infrastructure continues to grow, advanced memory technologies such as BV-NAND and next-generation HBM are expected to play a crucial role in powering future AI systems, cloud computing and high-performance data centres.
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